According to one embodiment, a semiconductor memory device includes a substrate; a stacked body provided on the substrate, the stacked body including a plurality of electrode layers, a plurality of insulating layers, the plurality of insulating layers having a side surface, a plurality of first conductive films provided between the plurality of electrode layers and the plurality of insulating layers, the plurality of first conductive films having a side surface, and a blocking insulating film, the blocking insulating film including a first portion and a second portion; and a semiconductor film. The first distance between the semiconductor film and the side surface of the plurality of first conductive films is shorter than a second distance between the semiconductor film and the second portion.