Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15078026Application Date: 2016-03-23
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Publication No.: US09837466B2Publication Date: 2017-12-05
- Inventor: Shintaro Matsuda
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-154312 20140729
- Main IPC: H01L21/673
- IPC: H01L21/673 ; H01L27/146 ; H01L21/683 ; H01L23/055
Abstract:
To protect a plurality of semiconductor chips of a sawn wafer housed in a shipping case and a method of manufacturing a semiconductor device includes a step of vacuum packing a sawn wafer while being housed in a shipping case; the shipping case has the following structure: the shipping case has a lid portion that covers the upper surface of the sawn wafer and a body portion that covers the lower surface of the sawn wafer, the lid portion has a recess portion that covers a plurality of semiconductor chips and a ventilation route communicated with the recess portion. In a step of reducing pressure in the shipping case, a gas in the shipping case is discharged outside via a ventilation route.
Public/Granted literature
- US20160204010A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-07-14
Information query
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