Invention Grant
- Patent Title: Semiconductor device with air gap and method for fabricating the same
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Application No.: US14994238Application Date: 2016-01-13
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Publication No.: US09837490B2Publication Date: 2017-12-05
- Inventor: Hae-Jung Park , Jung-Taik Cheong , Tae-Woo Jung , Yun-Je Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0093512 20150630
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L23/528 ; H01L23/532 ; H01L21/768 ; H01L21/762 ; H01L29/66

Abstract:
A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.
Public/Granted literature
- US20170005166A1 SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-01-05
Information query
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