Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
-
Application No.: US15271350Application Date: 2016-09-21
-
Publication No.: US09837515B2Publication Date: 2017-12-05
- Inventor: Nao Nagata
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2015-187817 20150925
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L29/66 ; H01L21/761 ; H01L29/10 ; H01L29/40 ; H02M7/537
Abstract:
A performance of a semiconductor device is improved. A semiconductor device includes two element portions and an interposition portion interposed between the two element portions. The interposition portion includes a p-type body region formed in a part of a semiconductor layer, the part being located between two trenches, and two p-type floating regions formed in two respective parts of the semiconductor layer, the two respective portions being located on both sides of the p-type body region via the two respective trenches. A lower end of the p-type floating region is arranged on a lower side with reference to a lower end of the p-type body region.
Public/Granted literature
- US20170092750A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-03-30
Information query
IPC分类:
