A semiconductor device including a Fin FET device includes a fin structure extending in a first direction and protruding from a substrate layer. The fin structure includes a bulk stressor layer formed on the substrate layer and a channel layer disposed over the bulk stressor layer. An oxide layer is formed on the substrate layer extending away from the channel layer. A source-drain (SD) stressor structure is disposed on sidewalls of the channel layer over the oxide layer. A gate stack including a gate electrode layer and a gate dielectric layer covers a portion of the channel layer and extends in a second direction perpendicular to the first direction.