Invention Grant
- Patent Title: Oxide semiconductor target, oxide semiconductor film and method for producing same, and thin film transistor
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Application No.: US14783435Application Date: 2014-04-10
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Publication No.: US09837543B2Publication Date: 2017-12-05
- Inventor: Hiroyuki Uchiyama , Hideko Fukushima
- Applicant: Hitachi Metals, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI METALS, LTD.
- Current Assignee: HITACHI METALS, LTD.
- Current Assignee Address: JP Tokyo
- Agency: SOLARIS Intellectual Property Group, PLLC
- Priority: JP2013-084253 20130412
- International Application: PCT/JP2014/060444 WO 20140410
- International Announcement: WO2014/168224 WO 20141016
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; C23C14/08 ; C23C14/34 ; H01L21/02
Abstract:
The invention provides an oxide semiconductor target including an oxide sintered body including zinc, tin, oxygen, and aluminum in a content ratio of from 0.005% by mass to 0.2% by mass with respect to the total mass of the oxide sintered body, in which the content ratio of silicon to the total mass of the oxide sintered body is less than 0.03% by mass.
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