Invention Grant
- Patent Title: Capacitively coupled electrodeless plasma apparatus and a method using capacitively coupled electrodeless plasma for processing a silicon substrate
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Application No.: US14764174Application Date: 2014-02-28
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Publication No.: US09837562B2Publication Date: 2017-12-05
- Inventor: Shuyan Xu , Chia Sern Chan , Luxiang Xu
- Applicant: NANYANG TECHNOLOGICAL UNIVERSITY
- Applicant Address: SG Singapore
- Assignee: Nanyang Technological University
- Current Assignee: Nanyang Technological University
- Current Assignee Address: SG Singapore
- International Application: PCT/SG2014/000097 WO 20140228
- International Announcement: WO2014/133465 WO 20140904
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/687 ; H01L31/02 ; H01J37/32 ; C23C16/505 ; H01L31/0236 ; C23C16/507 ; H01L31/18 ; H01L31/20 ; C23C16/24
Abstract:
There is provided a capacitive coupled electodeless plasma apparatus for processing a silicon substrate. The apparatus includes at least one inductive antenna driven by time-varying power sources for providing at least one electrostatic field; and a chamber for locating the silicon substrate. There is also provided a method for processing a silicon substrate using capacitively coupled electrodeless plasma.
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