Invention Grant
- Patent Title: Semiconductor light emitting device
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Application No.: US14202045Application Date: 2014-03-10
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Publication No.: US09837580B2Publication Date: 2017-12-05
- Inventor: Hideyuki Tomizawa , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Miyuki Shimojuku , Hideto Furuyama , Yoshiaki Sugizaki
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-223445 20131028
- Main IPC: H01L33/36
- IPC: H01L33/36 ; H01L33/38 ; H01L33/44 ; H01L33/50 ; H01L33/14 ; H01L33/20 ; H01L33/46 ; H01L33/48 ; H01L33/00

Abstract:
According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode. The corner is not in contact with the semiconductor layer. The straight portions of the n-side electrode are in contact with the semiconductor layer.
Public/Granted literature
- US20150115300A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2015-04-30
Information query
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