Invention Grant
- Patent Title: Semiconductor device, power supply control method of semiconductor device, and sensor node
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Application No.: US14389311Application Date: 2013-03-28
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Publication No.: US09837816B2Publication Date: 2017-12-05
- Inventor: Makoto Miyamura , Noboru Sakimura , Ryusuke Nebashi , Yukihide Tsuji , Tadahiko Sugibayashi
- Applicant: NEC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: NEC CORPORATION
- Current Assignee: NEC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2012-077960 20120329
- International Application: PCT/JP2013/059354 WO 20130328
- International Announcement: WO2013/147070 WO 20131003
- Main IPC: H02J1/08
- IPC: H02J1/08 ; H02J1/10

Abstract:
A semiconductor device includes a current control unit whose conductance is variable and a control unit configured to control the conductance of the current control unit. The current control unit is connected to a direct current power source in parallel with a load for the direct current power source, through a capacitor. The control unit sets the current control unit to a first conductance when the direct current power source and the load are not in a conduction state, and sets the current control unit to a second conductance larger than the first conductance when the direct current power source and the load are in the conduction state.
Public/Granted literature
- US20150048680A1 SEMICONDUCTOR DEVICE, POWER SUPPLY CONTROL METHOD OF SEMICONDUCTOR DEVICE, AND SENSOR NODE Public/Granted day:2015-02-19
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