An electronic device with substrate current management. The electronic device has a semiconductor substrate in which a Schottky diode is formed. A parasitic PN diode is also formed in the semiconductor substrate, and coexisted with the Schottky diode in parallel. The forward voltage of the Schottky diode is limited to be larger than the forward conduction threshold voltage of the Schottky diode and to be smaller than the forward conduction threshold voltage of the parasitic PN diode.