Invention Grant
- Patent Title: Defect inspecting method and defect inspecting apparatus
-
Application No.: US14986824Application Date: 2016-01-04
-
Publication No.: US09841384B2Publication Date: 2017-12-12
- Inventor: Toshiyuki Nakao , Shigenobu Maruyama , Akira Hamamatsu , Yuta Urano
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP2009-045857 20090227
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G01N21/95 ; G01N21/88 ; H01L21/66

Abstract:
A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.
Public/Granted literature
- US20160116421A1 DEFECT INSPECTING METHOD AND DEFECT INSPECTING APPARATUS Public/Granted day:2016-04-28
Information query