Invention Grant
- Patent Title: Optical device including three-coupled quantum well structure
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Application No.: US14492733Application Date: 2014-09-22
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Publication No.: US09841617B2Publication Date: 2017-12-12
- Inventor: Yongchul Cho , Yongtak Lee , Byunghoon Na , Changyoung Park , Gunwu Ju , Yonghwa Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gwangju KR Gyeonggi-do
- Assignee: Gwangju Institute of Science and Technology,Samsung Electronics Co., Ltd.
- Current Assignee: Gwangju Institute of Science and Technology,Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gwangju KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0040746 20140404
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L33/00 ; H01L29/66 ; H01L29/04 ; H01L29/40 ; G02F1/03 ; G02F1/017 ; H01L31/0352 ; H01L31/075 ; H01L31/105 ; H01L33/58 ; H01L23/532 ; H01L33/10 ; H01L33/04 ; H01L33/62 ; H01L23/528 ; G02F1/1335 ; H01L33/46 ; H01L33/60 ; H01L33/42 ; H01L33/50 ; B82Y20/00 ; G02F1/015

Abstract:
An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.
Public/Granted literature
- US20150286078A1 OPTICAL DEVICE INCLUDING THREE-COUPLED QUANTUM WELL STRUCTURE Public/Granted day:2015-10-08
Information query
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