Invention Grant
- Patent Title: Methods of forming thin film resistors with high power handling capability
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Application No.: US15197380Application Date: 2016-06-29
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Publication No.: US09842674B2Publication Date: 2017-12-12
- Inventor: Peter J. Zampardi, Jr. , Kai Hay Kwok
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US MA Woburn
- Assignee: SKYWORKS SOLUTIONS, INC.
- Current Assignee: SKYWORKS SOLUTIONS, INC.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01P1/22
- IPC: H01P1/22 ; H01C1/16 ; H01C1/012 ; H01C1/14 ; H01L27/01 ; H01L49/02 ; H01C7/00

Abstract:
Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.
Public/Granted literature
- US20160307671A1 METHODS OF FORMING THIN FILM RESISTORS WITH HIGH POWER HANDLING CAPABILITY Public/Granted day:2016-10-20
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