Invention Grant
- Patent Title: Self-aligned quadruple patterning process
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Application No.: US15046055Application Date: 2016-02-17
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Publication No.: US09842737B2Publication Date: 2017-12-12
- Inventor: Matthew E. Colburn , Sivananda K. Kanakasabapathy , Fee Li Lie , Stuart A. Sieg
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/8234 ; H01L29/66 ; H01L21/3213 ; H01L21/311 ; H01L21/306 ; H01L21/308
Abstract:
Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is formed on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width less than the first width are formed on non-facing sidewall surfaces of the neighboring pair of first mandrel structures. Each first mandrel structure is removed and a spacer is formed on a sidewall surface of the first and second sets of second mandrel structures. In the region between the neighboring pair of first mandrel structure, a merged spacer is formed. The first and second sets of second mandrel structures are removed. A portion of an underlying substrate can be patterned utilizing each spacer and the merged spacer as etch masks.
Public/Granted literature
- US20160163600A1 SELF-ALIGNED QUADRUPLE PATTERNING PROCESS Public/Granted day:2016-06-09
Information query
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