Invention Grant
- Patent Title: Integrated circuit device featuring an antifuse and method of making same
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Application No.: US14227415Application Date: 2014-03-27
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Publication No.: US09842802B2Publication Date: 2017-12-12
- Inventor: Zhongze Wang , John Jianhong Zhu , Xia Li
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza LLP
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L27/112 ; H01L21/8239 ; H01L23/525 ; G11C17/16 ; H01L23/522 ; H01L49/02

Abstract:
One feature pertains to an integrated circuit that includes an antifuse having a conductor-insulator-conductor structure. The antifuse includes a first conductor plate, a dielectric layer, and a second conductor plate, where the dielectric layer is interposed between the first and second conductor plates. The antifuse transitions from an open circuit state to a closed circuit state if a programming voltage Vpp greater than or equal to a dielectric breakdown voltage VBD of the antifuse is applied to the first conductor plate and the second conductor plate. The first conductor plate has a total edge length that is greater than two times the sum of its maximum width and maximum length dimensions. The first conductor plate's top surface area may also be less than the product of its maximum length and maximum width.
Public/Granted literature
- US20140210043A1 INTEGRATED CIRCUIT DEVICE FEATURING AN ANTIFUSE AND METHOD OF MAKING SAME Public/Granted day:2014-07-31
Information query
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