Invention Grant
- Patent Title: Method of manufacturing a semiconductor device having a trench at least partially filled with a conductive material in a semiconductor substrate
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Application No.: US15424312Application Date: 2017-02-03
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Publication No.: US09842904B2Publication Date: 2017-12-12
- Inventor: Anton Mauder , Reinhard Ploss , Hans-Joachim Schulze
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/324 ; H01L29/423 ; H01L21/306 ; H01L29/417 ; H01L29/66 ; H01L21/22 ; H01L21/225 ; H01L29/10 ; H01L29/167 ; H01L21/28 ; H01L29/49 ; H01L29/78 ; H01L29/739
Abstract:
A method of manufacturing a semiconductor device includes forming a first trench in a semiconductor substrate from a first side, forming a semiconductor layer adjoining the semiconductor substrate at the first side, the semiconductor layer capping the first trench at the first side, and forming a contact at a second side of the semiconductor substrate opposite to the first side.
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