A semiconductor device includes a semiconductor portion with a main FET and a control circuit. The main FET includes a gate electrode to control a current flow through a body zone between a source zone and a drift zone. The control circuit receives a local drift zone potential of the main FET cell and outputs an output signal indicating when the local drift zone potential exceeds a preset threshold. The control circuit may turn down or switch off the main FET and/or may output an overcurrent indication signal when the local drift zone potential exceeds the preset threshold.