Invention Grant
- Patent Title: Method, apparatus and system for using free-electron laser compatible EUV beam for semiconductor wafer metrology
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Application No.: US14645871Application Date: 2015-03-12
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Publication No.: US09844124B2Publication Date: 2017-12-12
- Inventor: Erik Robert Hosler , Pawitter J. S. Mangat
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H05G2/00
- IPC: H05G2/00 ; H01S3/09
Abstract:
At least one method, apparatus and system for providing capturing synchrotron radiation for a metrology tool, are disclosed. A beam using a first light emitting device is provided. The first light emitting device comprises a first electron path bend. A first synchrotron radiation is provided from the first electron path bend to a first metrology tool configured to perform a metrology inspection using the first synchrotron radiation.
Public/Granted literature
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