Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US13675354Application Date: 2012-11-13
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Publication No.: US09847108B2Publication Date: 2017-12-19
- Inventor: Muneaki Matsushige , Atsunori Hirobe , Kazutaka Kikuchi , Tetsuo Fukushi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-022976 20100204
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C7/00 ; G11C7/10

Abstract:
A semiconductor storage device includes: a plurality of memory cell arrays; a plurality of bidirectional data buses provided in correspondence with respective ones of the plurality of memory cell arrays; a plurality of bidirectional buffer circuits, which are provided in correspondence with respective ones of the memory cell arrays, capable of connecting adjacent bidirectional data buses serially so as to relay data in the bidirectional data buses; and a control circuit for controlling activation of the bidirectional buffer circuits. The bidirectional buffer circuit is arranged so as to invert logic and the bidirectional buffer circuit is arranged so as not to invert logic.
Public/Granted literature
- US20130073753A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2013-03-21
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