- Patent Title: Method of manufacturing transparent conductor, transparent conductor and device for manufacturing the same, and device for manufacturing transparent conductor precursor
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Application No.: US14657571Application Date: 2015-03-13
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Publication No.: US09847150B2Publication Date: 2017-12-19
- Inventor: Katsuyuki Naito , Yoshihiro Akasaka , Tianyi Yang , Norihiro Yoshinaga
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2014-051797 20140314
- Main IPC: H01B1/02
- IPC: H01B1/02 ; H01B1/24 ; B82Y30/00 ; H01B1/22 ; H01B1/20 ; C23F1/18 ; B82Y10/00 ; B82Y40/00 ; G06F3/041 ; H01B1/04 ; H01L51/44 ; H01L31/0224 ; H01L51/52 ; H01L29/16 ; H01L29/41 ; C23F1/00 ; C23F1/08 ; H01L51/00 ; H01L31/028

Abstract:
According to one embodiment, a method of manufacturing a transparent conductor is provided. In the method, a silver nanowire layer including a plurality of silver nanowires and having openings is formed on a graphene film supported by a copper support. Then, a transparent resin layer insoluble in a copper-etching solution is formed on the silver nanowire layer such that the transparent resin layer contacts the graphene film through the openings. The copper support is then brought into contact with the non-acidic copper-etching solution to remove the copper support, thereby exposing the graphene film.
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