- Patent Title: Method for forming a semiconductor device and semiconductor device
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Application No.: US14706435Application Date: 2015-05-07
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Publication No.: US09847229B2Publication Date: 2017-12-19
- Inventor: Hans-Joachim Schulze , Johannes Laven
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014106594 20140509
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/225 ; H01L21/266 ; H01L27/04 ; H01L29/36 ; H01L21/265 ; H01L29/66 ; H01L29/739 ; H01L29/861
Abstract:
A method for forming a semiconductor device includes depositing an epitaxial layer on a semiconductor substrate, forming an oxygen diffusion region within the epitaxial layer by oxygen diffusion from the semiconductor substrate into a part of the epitaxial layer and tempering at least the oxygen diffusion region of the epitaxial layer at a temperature between 400° C. and 480° C. for more than 15 minutes.
Public/Granted literature
- US20150325440A1 Method for Forming a Semiconductor Device and Semiconductor Device Public/Granted day:2015-11-12
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