Invention Grant
- Patent Title: Semiconductor memory device and method for manufacturing same
-
Application No.: US15268126Application Date: 2016-09-16
-
Publication No.: US09847342B2Publication Date: 2017-12-19
- Inventor: Satoshi Nagashima , Katsumi Yamamoto , Kohei Sakaike , Tatsuya Kato , Keisuke Kikutani , Fumitaka Arai , Atsushi Murakoshi , Shunichi Takeuchi , Katsuyuki Sekine
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/11556 ; H01L29/51 ; H01L27/11521 ; H01L29/06 ; H01L21/31 ; H01L21/306
Abstract:
A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are separated in a first direction and extend in a second direction. The interconnections are provided between the first structural body and the second structural body, extend in the second direction, and are separated from each other along a third direction. The first and the second structural bodies each includes an insulating member, a column-shaped body and an insulating film. The insulating member and the column-shaped body are disposed in an alternating manner along the second direction and extend in the third direction. The insulating members of the first and second structural bodies make contact with the interconnections.
Public/Granted literature
- US20170263619A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2017-09-14
Information query
IPC分类:
