- Patent Title: Image sensor devices and design and manufacturing methods thereof
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Application No.: US14464269Application Date: 2014-08-20
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Publication No.: US09847364B2Publication Date: 2017-12-19
- Inventor: Chun-Han Chen , Szu-Ying Chen , Dun-Nian Yaung
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/148 ; H01L27/146 ; H01L23/532 ; H01L23/498 ; H01L21/768

Abstract:
Image sensor devices, design methods thereof, and manufacturing methods thereof are disclosed. In some embodiments, a design method for an image sensor device includes providing an initial design for an image sensor device. The initial design includes a pixel array region and a through-via region disposed proximate the pixel array region. The initial design has a first length between the pixel array region and the through-via region. The initial design has a second length that is a width of the through-via region. The design method includes analyzing a ratio of the second length and the first length, and modifying the initial design to achieve an optimal ratio of the second length and the first length.
Public/Granted literature
- US20160056197A1 Image Sensor Devices and Design and Manufacturing Methods Thereof Public/Granted day:2016-02-25
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