Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15291845Application Date: 2016-10-12
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Publication No.: US09847394B2Publication Date: 2017-12-19
- Inventor: Gerhard Prechtl , Oliver Haeberlen , Clemens Ostermaier
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015117394 20151013
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/40 ; H01L29/20 ; H01L29/778 ; H01L29/423 ; H01L29/861 ; H01L29/06 ; H01L29/10 ; H01L29/205
Abstract:
In an embodiment, a semiconductor device includes a Group III-nitride-based High Electron Mobility Transistor (HEMT) configured as a bidirectional switch. The Group III nitride-based HEMT includes a first input/output electrode, a second input/output electrode, a gate structure arranged between the first input/output electrode and the second input/output electrode, and a field plate structure.
Public/Granted literature
- US20170104076A1 Semiconductor Device Public/Granted day:2017-04-13
Information query
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