Invention Grant
- Patent Title: Semiconductor devices and FinFETS
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Application No.: US15012584Application Date: 2016-02-01
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Publication No.: US09847424B2Publication Date: 2017-12-19
- Inventor: Martin Christopher Holland
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/78 ; H01L21/76 ; H01L21/02 ; H01L27/12 ; H01L29/04 ; H01L21/311 ; H01L29/06 ; H01L29/267 ; H01L29/66 ; H01L21/762 ; H01L29/775 ; H01L29/778 ; H01L29/205 ; H01L29/10 ; H01L29/20
Abstract:
Semiconductor devices and fin field effect transistors (FinFETs) are disclosed. In some embodiments, a representative semiconductor device includes a group III material over a substrate, the group III material comprising a thickness of about 2 monolayers or less, and a group III-V material over the group III material.
Public/Granted literature
- US20160149041A1 Semiconductor Devices and FinFETS Public/Granted day:2016-05-26
Information query
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