Provided is a photonic device in which emission intensity in a short wavelength region is suppressed even in the case of increasing carrier injection density so as to obtain a wide spectrum half-maximum width as well as a high output. The photonic device includes: a first cladding layer; a second cladding layer; and an active layer including an emitting layer and a barrier layer and being provided between the first cladding layer and the second cladding layer, the emitting layer emitting light in a spectrum having a center wavelength λc and a spectrum half-maximum width Δλ, in which at least one of the first cladding layer and the second cladding layer includes a light absorbing part for absorbing light having a wavelength of λs or less represented by the following Expression (1): λs