Invention Grant
- Patent Title: Magnetic domain wall logic devices and interconnect
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Application No.: US15119380Application Date: 2014-03-25
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Publication No.: US09847475B2Publication Date: 2017-12-19
- Inventor: Dmitri E. Nikonov , Sasikanth Manipatruni, II , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2014/031781 WO 20140325
- International Announcement: WO2015/147807 WO 20151001
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10
Abstract:
Described is an apparatus which comprises: first, second, and third free magnetic layers; a first metal layer of first material coupled to the first and third free magnetic layers; and a second metal layer of second material different from the first material, the second metal layer coupled to the second and third free magnetic layers. Described is an STT majority gate device which comprises: a free magnetic layer in a ring; and first, second, third, and fourth free magnetic layers coupled to the free magnetic layer.
Public/Granted literature
- US20170069831A1 MAGNETIC DOMAIN WALL LOGIC DEVICES AND INTERCONNECT Public/Granted day:2017-03-09
Information query
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