Invention Grant
- Patent Title: Metal nitride material for thermistor, method for producing same, and film thermistor sensor
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Application No.: US14380791Application Date: 2013-02-21
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Publication No.: US09852829B2Publication Date: 2017-12-26
- Inventor: Toshiaki Fujita , Hiroshi Tanaka , Hitoshi Inaba , Kazutaka Fujiwara , Noriaki Nagatomo
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2012-041967 20120228
- International Application: PCT/JP2013/055601 WO 20130221
- International Announcement: WO2013/129638 WO 20130906
- Main IPC: B41J2/045
- IPC: B41J2/045 ; H01C7/00 ; H01C7/04 ; C23C14/00 ; C23C14/06 ; C30B29/38 ; G01K7/22

Abstract:
Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0
Public/Granted literature
- US20150023394A1 METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR Public/Granted day:2015-01-22
Information query
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