Invention Grant
- Patent Title: Mask etch for patterning
-
Application No.: US14677890Application Date: 2015-04-02
-
Publication No.: US09852923B2Publication Date: 2017-12-26
- Inventor: Gene Lee , Lucy Chen
- Applicant: Applied Materials Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; C23C16/50 ; C23C16/52 ; H01L21/02 ; H01L21/67 ; H01L21/033 ; H01L27/1157 ; H01L27/11575 ; H01L27/11582
Abstract:
A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer. In one embodiment, a gas comprising a halogen element is supplied to a chamber. An organic mask layer on an insulating layer over a substrate is etched using the halogen element at a first temperature to form an opening to expose a portion of the insulating layer.
Public/Granted literature
- US20160293441A1 MASK ETCH FOR PATTERNING Public/Granted day:2016-10-06
Information query
IPC分类:
