Invention Grant
- Patent Title: Stacked conductor structure and methods for manufacture of same
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Application No.: US14506330Application Date: 2014-10-03
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Publication No.: US09852941B2Publication Date: 2017-12-26
- Inventor: Baoxing Chen
- Applicant: Analog Devices, Inc.
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/552 ; H01L49/02 ; H01L21/56 ; H01L21/768 ; H01L21/285 ; H01L21/311 ; H01L21/3213 ; H01L23/48 ; H01L23/50 ; H01L23/522 ; H01L23/532

Abstract:
A circuit structure that includes a plurality of stacked conductor layers separated from each other by respective dielectric layers. The conductor layers may include a first set of conductor layers made of a first type conductor material and a second set of conductor layers made of a second type conductor material different from the first. A pair of conductor posts may traverse the stacked conductor layers. A first post may be electrically connected to the first set of conductor layers and electrically insulated from the second set of conductor layers. A second post electrically connected to the second set of conductor layers and electrically insulated from the first set of conductor layers.
Public/Granted literature
- US20160099208A1 STACKED CONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURE OF SAME Public/Granted day:2016-04-07
Information query
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