Provided are a solid-state imaging element, which suppresses occurrence of a dark current and a white spot and even suppresses occurrence of a residual image, and a manufacturing method for the solid-state imaging element. A solid-state imaging element (1) is provided with: a gate electrode (4) above a substrate (2); a charge storage region (5) formed at a position inside the substrate (2) and apart from a top surface (2a) of the substrate (2); a read region (6) formed at a position inside the substrate (2) and on the opposite side to the charge storage region (5) with the gate electrode (4) interposed therebetween; a channel region (7, 8) formed inside the substrate (2) and immediately below the gate electrode (4); and a shield region (9) and an intermediate region (10) formed inside the substrate (2) and between the top surface (2a) of the substrate (2) and the charge storage region (5). The intermediate region (10) is formed at a position inside the substrate (2) and between the channel region (7, 8) and the shield region (9), and is in contact with each of the channel region (7, 8) and the shield region (9), and a concentration of first conductive type impurities in the intermediate region (10) is lower than a concentration of the first conductive type impurities in the shield region (9).