Invention Grant
- Patent Title: Tunnel field-effect transistor
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Application No.: US14455598Application Date: 2014-08-08
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Publication No.: US09853102B2Publication Date: 2017-12-26
- Inventor: Teng-Chun Tsai , Li-Ting Wang , Cheng-Tung Lin , De-Fang Chen , Chih-Tang Peng , Chien-Hsun Wang , Hung-Ta Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L21/265 ; H01L29/51 ; H01L29/739 ; B82Y10/00 ; H01L29/423 ; H01L29/775 ; H01L29/16
Abstract:
A tunnel field-effect transistor and method fabricating the same are provided. The tunnel field-effect transistor includes a drain region, a source region with opposite conductive type to the drain region, a channel region disposed between the drain region and the source region, a metal gate layer disposed around the channel region, and a high-k dielectric layer disposed between the metal gate layer and the channel region.
Public/Granted literature
- US20150318213A1 TUNNEL FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-11-05
Information query
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