Invention Grant
- Patent Title: Method for forming a semiconductor device and a semiconductor device
-
Application No.: US14935830Application Date: 2015-11-09
-
Publication No.: US09853137B2Publication Date: 2017-12-26
- Inventor: Moriz Jelinek , Johannes Georg Laven , Helmut Oefner , Hans-Joachim Schulze , Werner Schustereder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014116666 20141114
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/739 ; H01L21/263 ; H01L21/324 ; H01L21/66 ; H01L29/10 ; H01L29/36
Abstract:
A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.
Public/Granted literature
- US09972704B2 Method for forming a semiconductor device and a semiconductor device Public/Granted day:2018-05-15
Information query
IPC分类:
