Invention Grant
- Patent Title: Semiconductor light-emitting device and method for producing the same
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Application No.: US15060534Application Date: 2016-03-03
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Publication No.: US09853195B2Publication Date: 2017-12-26
- Inventor: Yuki Akamatsu , Yoshio Noguchi , Masahiro Ogushi , Teruo Takeuchi , Toshihiro Kuroki , Hidenori Egoshi , Takashi Arakawa , Kazuhiro Inoue , Toshihiro Komeya
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2015-084952 20150417
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/60 ; H01L33/48 ; H01L33/54
Abstract:
A light-emitting device includes a semiconductor light-emitting element, for example, a light emitting diode. A first metal member includes a first metal plate and a first metal layer between the semiconductor light-emitting element and a first surface of the first metal plate. An insulating layer contacts a second surface of the first metal plate. The second surface is in a second plane that intersects a first plane of the first surface.
Public/Granted literature
- US20160308099A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2016-10-20
Information query
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