Invention Grant
- Patent Title: Semiconductor laser device
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Application No.: US15322232Application Date: 2015-07-09
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Publication No.: US09853415B2Publication Date: 2017-12-26
- Inventor: Takayuki Yoshida , Jing-Bo Wang
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2014-143820 20140714
- International Application: PCT/JP2015/003458 WO 20150709
- International Announcement: WO2016/009622 WO 20160121
- Main IPC: H01S3/04
- IPC: H01S3/04 ; H01S5/024 ; H01S5/042 ; H01S5/42 ; H01S5/40

Abstract:
A semiconductor laser device of the present disclosure includes a cooling plate, an insulating sheet, a first cooling block, and a first semiconductor laser element. The conductive cooling plate includes a water supply passage and a drain passage. The insulating sheet is provided to the cooling plate, and includes a first through hole connected to the water supply passage and a second through hole connected to the drain passage. A first cooling block is provided to the insulating sheet, includes therein a first tube connected to the first through hole and the second through hole, and is electrically conductive. The first semiconductor laser element is provided to the first cooling block. The first semiconductor laser element includes a first electrode, and a second electrode opposite to the first electrode. The first electrode is electrically connected to the first cooling block, and the cooling plate is at a floating potential.
Public/Granted literature
- US20170149205A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2017-05-25
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