Invention Grant
- Patent Title: Method for manufacturing semiconductor device and substrate processing apparatus
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Application No.: US12379471Application Date: 2009-02-23
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Publication No.: US09856560B2Publication Date: 2018-01-02
- Inventor: Kenji Kameda , Jie Wang , Yuji Urano
- Applicant: Kenji Kameda , Jie Wang , Yuji Urano
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2007-314775 20071205; JP2008-046073 20080227; JP2008-261326 20081008
- Main IPC: H01L21/311
- IPC: H01L21/311 ; C23C16/44
Abstract:
The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber.
Public/Granted literature
- US20090170328A1 Method for manufacturing semiconductor device and substrate processing method Public/Granted day:2009-07-02
Information query
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