Invention Grant
- Patent Title: Bulk diffusion crystal growth of nitride crystal
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Application No.: US14477431Application Date: 2014-09-04
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Publication No.: US09856577B2Publication Date: 2018-01-02
- Inventor: Jason Schmitt , Peng Lu , Jeremy Jones
- Applicant: Nitride Solutions, Inc.
- Applicant Address: US KS Wichita
- Assignee: Nitride Solutions, Inc.
- Current Assignee: Nitride Solutions, Inc.
- Current Assignee Address: US KS Wichita
- Agency: Polsinelli PC
- Main IPC: C30B1/02
- IPC: C30B1/02 ; C30B23/00 ; C30B29/40 ; C30B25/00
Abstract:
The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.
Public/Granted literature
- US20150059641A1 BULK DIFFUSION CRYSTAL GROWTH PROCESS Public/Granted day:2015-03-05
Information query
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