According to one aspect, bank-level fault management in a memory system is provided. The memory system includes a plurality of ranks, each rank including a plurality of memory devices each having a plurality of banks. A first error is detected in a first bank number of a first memory device of a rank. The first bank number of the first memory device is marked with a bank-level chip mark. The bank-level chip mark isolates declaration of an error condition to the first bank number. A bank-level fault management action is performed based on the bank-level chip mark to accommodate the error condition.