Invention Grant
- Patent Title: Power supply circuit and semiconductor memory device including the same
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Application No.: US14807729Application Date: 2015-07-23
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Publication No.: US09858970B2Publication Date: 2018-01-02
- Inventor: Bon Kwang Koo
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0029824 20150303
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C5/14 ; G11C7/10

Abstract:
A power supply circuit includes a first transistor and a second transistor electrically coupled between a power supply terminal and an output terminal. When a first current path, in which output terminal through the first transistor, is formed, a voltage level of the output terminal may be controlled to be greater than or equal to a predetermined level. When a second current path, in which a current flows from the power supply terminal to the output terminal through the second transistor, is formed, the voltage level of the output terminal may be controlled to be less than or equal to the predetermined level.
Public/Granted literature
- US20160260463A1 POWER SUPPLY CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2016-09-08
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