Invention Grant
- Patent Title: Semiconductor devices comprising 2D-materials and methods of manufacture thereof
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Application No.: US14621635Application Date: 2015-02-13
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Publication No.: US09859115B2Publication Date: 2018-01-02
- Inventor: Meng-Yu Lin , Shih-Yen Lin , Si-Chen Lee , Samuel C. Pan
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd. , National Taiwan University
- Applicant Address: TW Taipei TW Hsin-Chu
- Assignee: National Taiwan University,Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: National Taiwan University,Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Taipei TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L21/02 ; H01L29/267 ; H01L29/66 ; H01L29/778 ; C01B32/186 ; H01L29/16 ; H01L29/24
Abstract:
Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.
Public/Granted literature
- US20160240719A1 Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof Public/Granted day:2016-08-18
Information query
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