Methodologies and a device for SRAM patterning are provided. Embodiments include forming a spacer layer over a fin channel, the fin channel being formed in four different device regions; forming a bottom mandrel over the spacer layer; forming a top mandrel directly over the bottom mandrel, wherein the top and bottom mandrels including different materials; forming a buffer oxide layer over the top mandrel; forming an anti-reflective coating (ARC) over the first OPL; forming a photoresist (PR) over the ARC and patterning the PR; and etching the first OPL, ARC, buffer oxide, and top mandrel with the pattern of the PR, wherein a pitch of the PR as patterned is different in each of the four device regions.