Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15473824Application Date: 2017-03-30
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Publication No.: US09859195B1Publication Date: 2018-01-02
- Inventor: Yasutaka Shimizu , Yoshitaka Otsubo , Mituharu Tabata
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2016-131706 20160701
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00

Abstract:
A semiconductor device includes: a circuit pattern, at least one or more wires joined thereto, an electrode terminal joining thereto, and a semiconductor element. The electrode terminal includes a horizontally extending portion extending along a main surface and connected to the wire, and a bent portion at which an extending direction of the electrode terminal is changed relative to the horizontally extending portion. Each of the wires has joint portions at which each of the wires and the circuit pattern are joined to each other. In a plan view, the joint portions are located on an outside of a portion where each of the wires and the electrode terminal overlap each other.
Public/Granted literature
- US20180005923A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-01-04
Information query
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