A structure and method for fabricating an e-Fuse device in a semiconductor device is described. A method for fabricating an e-Fuse device includes providing a trench structure including an anode region, a cathode region and a fuse element which interconnects the anode and cathode regions in a dielectric material on a first surface of a substrate. The fuse element has a smaller cross section and a higher aspect ratio than the anode and cathode regions. The trench is filled in the anode and cathode regions with a high electromigration (EM) resistant conductive material. The trench in the fuse element region is filled with a low EM resistant conductive material. Another aspect of the invention is an e-Fuse device. The e-Fuse device includes an anode region, a cathode region and a fuse element which interconnects the anode and cathode regions in a dielectric material on a first surface of a substrate. The fuse element has a smaller cross section and a higher aspect ratio than the anode and cathode regions. The anode and cathode regions are comprised of a high EM-resistant conductive material. The fuse element is comprised of low EM-resistant conductive material.