Invention Grant
- Patent Title: Backside cavity formation in semiconductor devices
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Application No.: US15154817Application Date: 2016-05-13
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Publication No.: US09859225B2Publication Date: 2018-01-02
- Inventor: David T. Petzold , David Scott Whitefield
- Applicant: SKYWORKS SOLUTIONS, INC.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Chang & Hale LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/336 ; H01L21/50 ; G01N27/414 ; H01L23/00 ; H01L27/12 ; H01L21/84 ; H01L23/66 ; H03H9/24 ; H01L21/764 ; H01L21/768 ; H01L23/528 ; H01L49/02 ; H01L29/06 ; H01L29/78 ; H04B1/40 ; H01L21/306 ; H01L23/535 ; H01L29/786 ; H04B1/44 ; H01L21/683 ; H01L25/16 ; H01L23/31
Abstract:
Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.
Public/Granted literature
- US20160336228A1 BACKSIDE CAVITY FORMATION IN SEMICONDUCTOR DEVICES Public/Granted day:2016-11-17
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