Invention Grant
- Patent Title: Semiconductor structure and manufacturing process thereof
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Application No.: US14724676Application Date: 2015-05-28
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Publication No.: US09859273B2Publication Date: 2018-01-02
- Inventor: Yi-Jen Chen , Chun-Sheng Liang , Shu-Hui Wang , Shih-Hsun Chang , Hsin-Che Chiang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/06 ; H01L29/49 ; H01L29/51 ; H01L29/423 ; H01L21/8234 ; H01L21/02 ; H01L21/762 ; H01L21/311
Abstract:
A process of manufacturing a semiconductor structure is provided. The process begins with forming a work function metal layer on a substrate, and a hardmask is covered over the work function metal layer. A trench is formed to penetrate the hardmask and the work function metal layer, and an isolation structure is filled in the trench.
Public/Granted literature
- US20160351563A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING PROCESS THEREOF Public/Granted day:2016-12-01
Information query
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