Invention Grant
- Patent Title: Non-volatile push-pull non-volatile memory cell having reduced operation disturb and process for manufacturing same
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Application No.: US15041189Application Date: 2016-02-11
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Publication No.: US09859289B2Publication Date: 2018-01-02
- Inventor: Fethi Dhaoui , John McCollum
- Applicant: Microsemi SoC Corporation
- Agency: Cisio & Thomas, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/11521 ; H01L27/24 ; G11C16/04 ; G11C16/34 ; H01L21/265 ; H01L21/28 ; H01L21/762 ; H01L21/8238 ; H01L23/528 ; H01L27/092 ; H01L29/06 ; H01L29/08 ; H01L29/167 ; H01L29/78 ; H01L21/324
Abstract:
A non-volatile memory cell includes a p-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel and an n-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel. In at least one of the p-channel non-volatile transistor and the n-channel non-volatile transistor, a lightly-doped drain region extends from the drain into the channel.
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