Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US14977865Application Date: 2015-12-22
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Publication No.: US09859376B2Publication Date: 2018-01-02
- Inventor: Han-ki Lee , Jae-Young Park , Dong-Hun Lee , Bon-Young Koo , Sun-Young Lee , Jae-Jong Han
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2015-0048199 20150406
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L29/786 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L29/775
Abstract:
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a multi-channel active pattern including germanium and an inner region and an outer region, the outer region formed along a profile of the inner region, and a germanium fraction of the outer region being smaller than a germanium fraction of the inner region. A gate electrode intersects the multi-channel active pattern.
Public/Granted literature
- US20160293705A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2016-10-06
Information query
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