Invention Grant
- Patent Title: Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
-
Application No.: US14844332Application Date: 2015-09-03
-
Publication No.: US09859381B2Publication Date: 2018-01-02
- Inventor: Jizhong Li , Anthony J. Lochtefeld
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/205 ; H01L21/8238 ; H01L21/8252 ; H01L21/8258 ; H01L27/06 ; H01L29/04 ; H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L31/036 ; H01L31/0735 ; H01L33/00 ; H01L33/18 ; H01S5/22 ; H01S5/323 ; H01L21/762
Abstract:
A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.
Public/Granted literature
Information query
IPC分类:
