Invention Grant
- Patent Title: Multiple step thin film deposition method for high conformality
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Application No.: US15174147Application Date: 2016-07-22
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Publication No.: US09859403B1Publication Date: 2018-01-02
- Inventor: Nicolas L. Breil , Neal A. Makela , Praneet Adusumilli , Domingo A. Ferrer
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully Scott Murphy and Presser
- Agent Frank Digiglio
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/66 ; H01L29/04 ; H01L29/08 ; H01L21/285 ; H01L29/78
Abstract:
During a physical vapor deposition (PVD) process, the ion energy of a depositing species is controlled. By varying the ion energy throughout the process, the degree of conformality of the deposited layer over three-dimensional structures, including the extent to which the deposited layer merges between adjacent structures can be controlled.
Public/Granted literature
- US20180026118A1 MULTIPLE STEP THIN FILM DEPOSITION METHOD FOR HIGH CONFORMALITY Public/Granted day:2018-01-25
Information query
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