Invention Grant
- Patent Title: Field effect transistor
-
Application No.: US15306713Application Date: 2015-02-20
-
Publication No.: US09859411B2Publication Date: 2018-01-02
- Inventor: Takamitsu Suzuki , Masaya Isobe , Masaru Kubo
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Osaka
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2014-105532 20140521
- International Application: PCT/JP2015/054866 WO 20150220
- International Announcement: WO2015/178050 WO 20151126
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/778 ; H01L29/78 ; H01L29/786 ; H01L23/528 ; H01L23/64 ; H01L29/205 ; H01L29/417 ; H01L29/20 ; H01L29/40 ; H01L29/45
Abstract:
A field-effect transistor (a GaN-based HFET) includes a gate electrode, a gate electrode pad, a first wiring line connecting one end of the gate electrode and the gate electrode pad, a second wiring line connecting the other end of the gate electrode and the gate electrode pad, and a resistance element that is connected to the first wiring line and is capable of adjusting the impedance of the first wiring line.
Public/Granted literature
- US20170077276A1 FIELD EFFECT TRANSISTOR Public/Granted day:2017-03-16
Information query
IPC分类:
